A research team at at Tokyo University of Science developed a wide-band, high-sensitivity Barkhausen noise measurement system. Iron losses are divided into three components: hysteresis loss, classical ...

Negative capacitance has the potential to improve GaN device performance and open new possibilities in power electronics and telecommunications. Gallium nitride transistors have rapidly emerged in ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...

GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types. Silicon power MOSFETs have not kept pace with the evolutionary ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...

In sensorless control systems, the magnetic angle of the motor is estimated from the motor phase voltages and currents. Its position is determined by monitoring certain electrical parameters of the ...

The state of the current power electronics is increasingly focused on reliable power converters that can reduce the costs of the entire system. Over time, the engineering approach has been directed ...

This article will discuss the potential advantages and challenges of diamond semiconductors in future power conversion applications, with a highlight on a new laser slicing technique. Figure 1 shows a ...

A novel application from Innoscience for a BMS uses a GaN HEMT that is designed and configured as a bidirectional device. Bidirectional switches (BDSes) have many different applications. One example ...

For example, if you want to run a sweep analysis of the input voltage from 0 V to 5 V with an increment of 1 V, you can use the following command in the circuit description file: If the resistor ...

This article explores the differences between inverters based on silicon power devices and those utilizing WBG technologies, evaluating their advantages, disadvantages, and suitability for different ...