Silvaco Group, Inc., a provider of TCAD and EDA software, has announced that Excelliance MOS has adopted its Design Technology Co-Optimization (DTCO) flow, incorporating Victory TCAD and UTMOST IV ...

Table 1 Compilation of device parameters. A linear background approximating the direct charge sensor response to the gate is included. Examples of all three types of data are presented in Fig. 2(a).

The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...

Developers of gallium oxide power devices should draw on lessons learnt from the pioneers of compound semiconductor MOSFETs.

A conceptual diagram of diluted hydrogen annealing of SiO 2 /SiC structure. The background scenery is inside the Class 1 cleanroom located in Graduate School of Engineering, The University of Osaka.

A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...

Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. The new Radiation Hardened (RH) PowerMOS devices of the ...

This paper presents a design algorithm and implementation results for electronically tunable fractional-order elements (FOEs) with capacitive character based on distributed MOS transistor structures ...

A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...